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1 Ergebnisse
1
Gate driver IC for enhancement mode GaN power transistors w..:
Zhang, Wei Jia
;
Leng, Yahui
;
Yu, Jingshu
...
IET Power Electronics. 12 (2019) 15 - p. 3928-3935 , 2019
Link:
https://doi.org/10.1049/iet-pel.2018.6381
RT Journal T1
Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit
UL https://suche.suub.uni-bremen.de/peid=cr-10.1049_iet-pel.2018.6381&Exemplar=1&LAN=DE A1 Zhang, Wei Jia A1 Leng, Yahui A1 Yu, Jingshu A1 Jiang, Xiaoxue A1 Cheng, ChuYao A1 Ng, Wai Tung PB Institution of Engineering and Technology (IET) YR 2019 SN 1755-4543 SN 1755-4543 JF IET Power Electronics VO 12 IS 15 SP 3928 OP 3935 LK http://dx.doi.org/https://doi.org/10.1049/iet-pel.2018.6381 DO https://doi.org/10.1049/iet-pel.2018.6381 SF ELIB - SuUB Bremen
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