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1 Ergebnisse
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Threshold voltage study of scaled self‐aligned In0.53Ga0.47..:
Dehzangi, A.
;
Razip Wee, M.F. Mohd
;
Wichmann, N.
...
Micro & Nano Letters. 9 (2014) 3 - p. 180-183 , 2014
Link:
https://doi.org/10.1049/mnl.2014.0007
RT Journal T1
Threshold voltage study of scaled self‐aligned In0.53Ga0.47As metal oxide semiconductor field effect transistor for different source/drain doping concentrations
UL https://suche.suub.uni-bremen.de/peid=cr-10.1049_mnl.2014.0007&Exemplar=1&LAN=DE A1 Dehzangi, A. A1 Razip Wee, M.F. Mohd A1 Wichmann, N. A1 Bollaert, S. A1 Buyong, M.R. A1 Majlis, B.Y. PB Institution of Engineering and Technology (IET) YR 2014 SN 1750-0443 SN 1750-0443 JF Micro & Nano Letters VO 9 IS 3 SP 180 OP 183 LK http://dx.doi.org/https://doi.org/10.1049/mnl.2014.0007 DO https://doi.org/10.1049/mnl.2014.0007 SF ELIB - SuUB Bremen
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