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1 Ergebnisse
1
Removal of hydrogen from the base of carbon-doped In0.49Ga0..:
Hartmann, Q. J.
;
Hwangbo, H.
;
Yung, A.
...
Applied Physics Letters. 68 (1996) 7 - p. 982-984 , 1996
Link:
https://doi.org/10.1063/1.116119
RT Journal T1
Removal of hydrogen from the base of carbon-doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by ex situ annealing and the effects on device characteristics
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.116119&Exemplar=1&LAN=DE A1 Hartmann, Q. J. A1 Hwangbo, H. A1 Yung, A. A1 Ahmari, D. A. A1 Fresina, M. T. A1 Baker, J. E. A1 Stillman, G. E. PB AIP Publishing YR 1996 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 68 IS 7 SP 982 OP 984 LK http://dx.doi.org/https://doi.org/10.1063/1.116119 DO https://doi.org/10.1063/1.116119 SF ELIB - SuUB Bremen
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