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1 Ergebnisse
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Relaxation of the Si lattice strain in the Si(001)–SiO2 int..:
Ha, Yong Ho
;
Kim, Sehun
;
Lee, Sun Young
...
Applied Physics Letters. 74 (1999) 23 - p. 3510-3512 , 1999
Link:
https://doi.org/10.1063/1.124146
RT Journal T1
Relaxation of the Si lattice strain in the Si(001)–SiO2 interface by annealing in N2O
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.124146&Exemplar=1&LAN=DE A1 Ha, Yong Ho A1 Kim, Sehun A1 Lee, Sun Young A1 Kim, Jin Ho A1 Baek, Doo Hyun A1 Kim, Hyun Kyung A1 Moon, Dae Won PB AIP Publishing YR 1999 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 74 IS 23 SP 3510 OP 3512 LK http://dx.doi.org/https://doi.org/10.1063/1.124146 DO https://doi.org/10.1063/1.124146 SF ELIB - SuUB Bremen
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