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Luminescence energy and carrier lifetime in InGaN/GaN quant..:
Shapiro, N. A.
;
Feick, H.
;
Hong, W.
...
Journal of Applied Physics. 94 (2003) 7 - p. 4520-4529 , 2003
Link:
https://doi.org/10.1063/1.1607521
RT Journal T1 <Title>Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.1607521&Exemplar=1&LAN=DE A1 Shapiro, N. A. A1 Feick, H. A1 Hong, W. A1 Cich, M. A1 Armitage, R. A1 Weber, E. R. PB AIP Publishing YR 2003 SN 0021-8979 SN 1089-7550 JF Journal of Applied Physics VO 94 IS 7 SP 4520 OP 4529 LK http://dx.doi.org/https://doi.org/10.1063/1.1607521 DO https://doi.org/10.1063/1.1607521 SF ELIB - SuUB Bremen
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