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Theoretical study of band edges in porous silicon:
Yorikawa, H.
;
Sato, T.
;
Muramatsu, S.
Journal of Applied Physics. 95 (2004) 7 - p. 3569-3572 , 2004
Link:
https://doi.org/10.1063/1.1650897
RT Journal T1 <Title>Theoretical study of band edges in porous silicon</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.1650897&Exemplar=1&LAN=DE A1 Yorikawa, H. A1 Sato, T. A1 Muramatsu, S. PB AIP Publishing YR 2004 SN 0021-8979 SN 1089-7550 JF Journal of Applied Physics VO 95 IS 7 SP 3569 OP 3572 LK http://dx.doi.org/https://doi.org/10.1063/1.1650897 DO https://doi.org/10.1063/1.1650897 SF ELIB - SuUB Bremen
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