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1 Ergebnisse
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Systematic analysis of silicon oxynitride interfacial layer..:
Rhee, Se Jong
;
Zhu, Feng
;
Kim, Hyoung-Sub
...
Applied Physics Letters. 88 (2006) 15 - p. , 2006
Link:
https://doi.org/10.1063/1.2192646
RT Journal T1
Systematic analysis of silicon oxynitride interfacial layer and its effects on electrical characteristics of high-k HfO2 transistor
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.2192646&Exemplar=1&LAN=DE A1 Rhee, Se Jong A1 Zhu, Feng A1 Kim, Hyoung-Sub A1 Kang, Chang Yong A1 Choi, Chang Hwan A1 Zhang, Manhong A1 Lee, Tackhwi A1 Ok, Injo A1 Krishnan, Siddarth A. A1 Lee, Jack C. PB AIP Publishing YR 2006 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 88 IS 15 LK http://dx.doi.org/https://doi.org/10.1063/1.2192646 DO https://doi.org/10.1063/1.2192646 SF ELIB - SuUB Bremen
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