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Low-frequency admittance measurements on the HgCdTe/Photox ..:
Tsau, G. H.
;
Sher, A.
;
Madou, M.
...
Journal of Applied Physics. 59 (1986) 4 - p. 1238-1244 , 1986
Link:
https://doi.org/10.1063/1.336511
RT Journal T1 <Title>Low-frequency admittance measurements on the HgCdTe/Photox SiO2 interface</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.336511&Exemplar=1&LAN=DE A1 Tsau, G. H. A1 Sher, A. A1 Madou, M. A1 Wilson, J. A. A1 Cotton, V. A. A1 Jones, C. E. PB AIP Publishing YR 1986 SN 0021-8979 SN 1089-7550 JF Journal of Applied Physics VO 59 IS 4 SP 1238 OP 1244 LK http://dx.doi.org/https://doi.org/10.1063/1.336511 DO https://doi.org/10.1063/1.336511 SF ELIB - SuUB Bremen
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