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Evidence of silicon segregation as a function of arsenic ov..:
Fatt, Yoon Soon
Journal of Applied Physics. 72 (1992) 7 - p. 2846-2849 , 1992
Link:
https://doi.org/10.1063/1.351537
RT Journal T1 <Title>Evidence of silicon segregation as a function of arsenic overpressure in GaAs grown by molecular beam epitaxy</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.351537&Exemplar=1&LAN=DE A1 Fatt, Yoon Soon PB AIP Publishing YR 1992 SN 0021-8979 SN 1089-7550 JF Journal of Applied Physics VO 72 IS 7 SP 2846 OP 2849 LK http://dx.doi.org/https://doi.org/10.1063/1.351537 DO https://doi.org/10.1063/1.351537 SF ELIB - SuUB Bremen
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