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1 Ergebnisse
1
Effect of an InGaP cap layer on annealing-induced conductiv..:
Watanabe, Kazuo
;
Hyuga, Fumiaki
;
Sugitani, Suehiro
.
Journal of Applied Physics. 78 (1995) 3 - p. 1793-1797 , 1995
Link:
https://doi.org/10.1063/1.360210
RT Journal T1
Effect of an InGaP cap layer on annealing-induced conductivity degradation in heavily Si-doped n+GaAs epilayers
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.360210&Exemplar=1&LAN=DE A1 Watanabe, Kazuo A1 Hyuga, Fumiaki A1 Sugitani, Suehiro A1 Nittono, Takumi PB AIP Publishing YR 1995 SN 0021-8979 SN 1089-7550 JF Journal of Applied Physics VO 78 IS 3 SP 1793 OP 1797 LK http://dx.doi.org/https://doi.org/10.1063/1.360210 DO https://doi.org/10.1063/1.360210 SF ELIB - SuUB Bremen
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