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Defect states responsible for leakage current in Ta2O5 film..:
Lau, W. S.
;
Khaw, K. K.
;
Qian, P. W.
..
Journal of Applied Physics. 79 (1996) 11 - p. 8841-8843 , 1996
Link:
https://doi.org/10.1063/1.362510
RT Journal T1 <Title>Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.362510&Exemplar=1&LAN=DE A1 Lau, W. S. A1 Khaw, K. K. A1 Qian, P. W. A1 Sandler, N. P. A1 Chu, P. K. PB AIP Publishing YR 1996 SN 0021-8979 SN 1089-7550 JF Journal of Applied Physics VO 79 IS 11 SP 8841 OP 8843 LK http://dx.doi.org/https://doi.org/10.1063/1.362510 DO https://doi.org/10.1063/1.362510 SF ELIB - SuUB Bremen
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