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Broad photoluminescence band in undoped AlxGa1−xAs grown by..:
Kakinuma, H.
;
Akiyama, M.
Journal of Applied Physics. 81 (1997) 11 - p. 7533-7539 , 1997
Link:
https://doi.org/10.1063/1.365296
RT Journal T1 <Title>Broad photoluminescence band in undoped AlxGa1−xAs grown by organometallic vapor phase epitaxy</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.365296&Exemplar=1&LAN=DE A1 Kakinuma, H. A1 Akiyama, M. PB AIP Publishing YR 1997 SN 0021-8979 SN 1089-7550 JF Journal of Applied Physics VO 81 IS 11 SP 7533 OP 7539 LK http://dx.doi.org/https://doi.org/10.1063/1.365296 DO https://doi.org/10.1063/1.365296 SF ELIB - SuUB Bremen
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