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1 Ergebnisse
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Ti-electrode effects of NiO based resistive switching memor..:
Ryu, Seung Wook
;
Ahn, Young Bae
;
Kim, Hyeong Joon
.
Applied Physics Letters. 100 (2012) 13 - p. , 2012
Link:
https://doi.org/10.1063/1.3697691
RT Journal T1
Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.3697691&Exemplar=1&LAN=DE A1 Ryu, Seung Wook A1 Ahn, Young Bae A1 Kim, Hyeong Joon A1 Nishi, Yoshio PB AIP Publishing YR 2012 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 100 IS 13 LK http://dx.doi.org/https://doi.org/10.1063/1.3697691 DO https://doi.org/10.1063/1.3697691 SF ELIB - SuUB Bremen
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