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1 Ergebnisse
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Electron and hole deep levels related to Sb-mediated Ge qua..:
Rangel-Kuoppa, Victor-Tapio
;
Tonkikh, Alexander
;
Werner, Peter
.
Applied Physics Letters. 102 (2013) 23 - p. , 2013
Link:
https://doi.org/10.1063/1.4809595
RT Journal T1 <Title>Electron and hole deep levels related to Sb-mediated Ge quantum dots embedded in n-type Si, studied by deep level transient spectroscopy</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.4809595&Exemplar=1&LAN=DE A1 Rangel-Kuoppa, Victor-Tapio A1 Tonkikh, Alexander A1 Werner, Peter A1 Jantsch, Wolfgang PB AIP Publishing YR 2013 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 102 IS 23 LK http://dx.doi.org/https://doi.org/10.1063/1.4809595 DO https://doi.org/10.1063/1.4809595 SF ELIB - SuUB Bremen
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