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Investigation of trap properties in high-k/metal gate p-typ..:
Kao, Tsung-Hsien
;
Chang, Shoou-Jinn
;
Fang, Yean-Kuen
...
Applied Physics Letters. 105 (2014) 6 - p. , 2014
Link:
https://doi.org/10.1063/1.4893445
RT Journal T1
Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.4893445&Exemplar=1&LAN=DE A1 Kao, Tsung-Hsien A1 Chang, Shoou-Jinn A1 Fang, Yean-Kuen A1 Huang, Po-Chin A1 Lai, Chien-Ming A1 Hsu, Chia-Wei A1 Chen, Yi-Wen A1 Cheng, Osbert A1 Wu, Chung-Yi A1 Wu, San-Lein PB AIP Publishing YR 2014 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 105 IS 6 LK http://dx.doi.org/https://doi.org/10.1063/1.4893445 DO https://doi.org/10.1063/1.4893445 SF ELIB - SuUB Bremen
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