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1 Ergebnisse
1
Gate-tunable, normally-on to normally-off memristance trans..:
Maier, P.
;
Hartmann, F.
;
Gabel, J.
...
Applied Physics Letters. 110 (2017) 9 - p. , 2017
Link:
https://doi.org/10.1063/1.4977834
RT Journal T1
Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.4977834&Exemplar=1&LAN=DE A1 Maier, P. A1 Hartmann, F. A1 Gabel, J. A1 Frank, M. A1 Kuhn, S. A1 Scheiderer, P. A1 Leikert, B. A1 Sing, M. A1 Worschech, L. A1 Claessen, R. A1 Höfling, S. PB AIP Publishing YR 2017 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 110 IS 9 LK http://dx.doi.org/https://doi.org/10.1063/1.4977834 DO https://doi.org/10.1063/1.4977834 SF ELIB - SuUB Bremen
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