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1 Ergebnisse
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Improved electrical properties of atomic layer deposited ti..:
Lee, Juhyun
;
Lee, Jeongsu
;
Ham, Giyul
...
AIP Advances. 7 (2017) 2 - p. 025311 , 2017
Link:
https://doi.org/10.1063/1.4977887
RT Journal T1
Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.4977887&Exemplar=1&LAN=DE A1 Lee, Juhyun A1 Lee, Jeongsu A1 Ham, Giyul A1 Shin, Seokyoon A1 Park, Joohyun A1 Choi, Hyeongsu A1 Lee, Seungjin A1 Kim, Juyoung A1 Sul, Onejae A1 Lee, Seungbeck A1 Jeon, Hyeongtag PB AIP Publishing YR 2017 SN 2158-3226 JF AIP Advances VO 7 IS 2 SP 025311 LK http://dx.doi.org/https://doi.org/10.1063/1.4977887 DO https://doi.org/10.1063/1.4977887 SF ELIB - SuUB Bremen
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