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1 Ergebnisse
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Bendable MOS capacitors formed with printed In0.2Ga0.8As/Ga..:
Liu, Chen
;
June Cho, Sang
;
Hwan Jung, Yei
...
Applied Physics Letters. 110 (2017) 13 - p. , 2017
Link:
https://doi.org/10.1063/1.4979509
RT Journal T1
Bendable MOS capacitors formed with printed In0.2Ga0.8As/GaAs/In0.2Ga0.8As trilayer nanomembrane on plastic substrates
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.4979509&Exemplar=1&LAN=DE A1 Liu, Chen A1 June Cho, Sang A1 Hwan Jung, Yei A1 Chang, Tzu-Hsuan A1 Seo, Jung-Hun A1 Mikael, Solomon A1 Zhang, Yuming A1 Zhang, Yi-Men A1 Lu, Hongliang A1 Li Guo, Xin A1 Mi, Hongyi A1 Zhang, Huilong A1 Ma, Zhenqiang PB AIP Publishing YR 2017 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 110 IS 13 LK http://dx.doi.org/https://doi.org/10.1063/1.4979509 DO https://doi.org/10.1063/1.4979509 SF ELIB - SuUB Bremen
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