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1 Ergebnisse
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On the distribution of oxide defect levels in Al2O3 and HfO..:
Vais, Abhitosh
;
Franco, Jacopo
;
Lin, Dennis
...
Journal of Applied Physics. 121 (2017) 14 - p. , 2017
Link:
https://doi.org/10.1063/1.4980170
RT Journal T1
On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.4980170&Exemplar=1&LAN=DE A1 Vais, Abhitosh A1 Franco, Jacopo A1 Lin, Dennis A1 Putcha, Vamsi A1 Sioncke, Sonja A1 Mocuta, Anda A1 Collaert, Nadine A1 Thean, Aaron A1 De Meyer, Kristin PB AIP Publishing YR 2017 SN 0021-8979 SN 1089-7550 JF Journal of Applied Physics VO 121 IS 14 LK http://dx.doi.org/https://doi.org/10.1063/1.4980170 DO https://doi.org/10.1063/1.4980170 SF ELIB - SuUB Bremen
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