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1 Ergebnisse
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Highly-efficient thermoelectric pn-junction device based on..:
Kogo, Gilbert
;
Lee, Harold
;
Ibrahim, Adem H.
...
Journal of Applied Physics. 124 (2018) 16 - p. , 2018
Link:
https://doi.org/10.1063/1.5046686
RT Journal T1
Highly-efficient thermoelectric pn-junction device based on bismuth telluride (Bi2Te3) and molybdenum disulfide (MoS2) thin films fabricated by RF magnetron sputtering technique
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.5046686&Exemplar=1&LAN=DE A1 Kogo, Gilbert A1 Lee, Harold A1 Ibrahim, Adem H. A1 Bo, Xiao A1 Pradhan, Sangram K. A1 Bahoura, Messaoud PB AIP Publishing YR 2018 SN 0021-8979 SN 1089-7550 JF Journal of Applied Physics VO 124 IS 16 LK http://dx.doi.org/https://doi.org/10.1063/1.5046686 DO https://doi.org/10.1063/1.5046686 SF ELIB - SuUB Bremen
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