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1 Ergebnisse
1
Poly-Si/SiOx/c-Si passivating contact with 738 mV implied o..:
Li, Shenghao
;
Pomaska, Manuel
;
Hoß, Jan
...
Applied Physics Letters. 114 (2019) 15 - p. , 2019
Link:
https://doi.org/10.1063/1.5089650
RT Journal T1
Poly-Si/SiOx/c-Si passivating contact with 738 mV implied open circuit voltage fabricated by hot-wire chemical vapor deposition
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.5089650&Exemplar=1&LAN=DE A1 Li, Shenghao A1 Pomaska, Manuel A1 Hoß, Jan A1 Lossen, Jan A1 Pennartz, Frank A1 Nuys, Maurice A1 Hong, Ruijiang A1 Schmalen, Andreas A1 Wolff, Johannes A1 Finger, Friedhelm A1 Rau, Uwe A1 Ding, Kaining PB AIP Publishing YR 2019 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 114 IS 15 LK http://dx.doi.org/https://doi.org/10.1063/1.5089650 DO https://doi.org/10.1063/1.5089650 SF ELIB - SuUB Bremen
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