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1 Ergebnisse
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Improved characteristics of MOS interface between In0.53Ga0..:
Kim, Seong Kwang
;
Geum, Dae-Myeong
;
Lim, Hyeong-Rak
...
Applied Physics Letters. 115 (2019) 14 - p. , 2019
Link:
https://doi.org/10.1063/1.5111377
RT Journal T1
Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H2 annealing with Pt gate electrode
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.5111377&Exemplar=1&LAN=DE A1 Kim, Seong Kwang A1 Geum, Dae-Myeong A1 Lim, Hyeong-Rak A1 Kim, Hansung A1 Han, Jae-Hoon A1 Hwang, Do Kyung A1 Song, Jin Dong A1 Kim, Hyung-jun A1 Kim, Sanghyeon PB AIP Publishing YR 2019 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 115 IS 14 LK http://dx.doi.org/https://doi.org/10.1063/1.5111377 DO https://doi.org/10.1063/1.5111377 SF ELIB - SuUB Bremen
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