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1 Ergebnisse
1
In situ and selective area etching of GaN by tertiarybutylc..:
Li, Bingjun
;
Nami, Mohsen
;
Wang, Sizhen
.
Applied Physics Letters. 115 (2019) 16 - p. , 2019
Link:
https://doi.org/10.1063/1.5120420
RT Journal T1
In situ and selective area etching of GaN by tertiarybutylchloride (TBCl)
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_1.5120420&Exemplar=1&LAN=DE A1 Li, Bingjun A1 Nami, Mohsen A1 Wang, Sizhen A1 Han, Jung PB AIP Publishing YR 2019 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 115 IS 16 LK http://dx.doi.org/https://doi.org/10.1063/1.5120420 DO https://doi.org/10.1063/1.5120420 SF ELIB - SuUB Bremen
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