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Annealing behaviors of vacancy-type defects in AlN deposite..:
Uedono, Akira
;
Shojiki, Kanako
;
Uesugi, Kenjiro
...
Journal of Applied Physics. 128 (2020) 8 - p. , 2020
Link:
https://doi.org/10.1063/5.0015225
RT Journal T1
Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_5.0015225&Exemplar=1&LAN=DE A1 Uedono, Akira A1 Shojiki, Kanako A1 Uesugi, Kenjiro A1 Chichibu, Shigefusa F. A1 Ishibashi, Shoji A1 Dickmann, Marcel A1 Egger, Werner A1 Hugenschmidt, Christoph A1 Miyake, Hideto PB AIP Publishing YR 2020 SN 0021-8979 SN 1089-7550 JF Journal of Applied Physics VO 128 IS 8 LK http://dx.doi.org/https://doi.org/10.1063/5.0015225 DO https://doi.org/10.1063/5.0015225 SF ELIB - SuUB Bremen
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