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1 Ergebnisse
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Confined lateral epitaxial overgrowth of InGaAs: Mechanisms..:
Goswami, Aranya
;
Markman, Brian
;
Brunelli, Simone T. Šuran
...
Journal of Applied Physics. 130 (2021) 8 - p. , 2021
Link:
https://doi.org/10.1063/5.0050802
RT Journal T1
Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_5.0050802&Exemplar=1&LAN=DE A1 Goswami, Aranya A1 Markman, Brian A1 Brunelli, Simone T. Šuran A1 Chatterjee, Shouvik A1 Klamkin, Jonathan A1 Rodwell, Mark A1 Palmstrøm, Chris J. PB AIP Publishing YR 2021 SN 0021-8979 SN 1089-7550 JF Journal of Applied Physics VO 130 IS 8 LK http://dx.doi.org/https://doi.org/10.1063/5.0050802 DO https://doi.org/10.1063/5.0050802 SF ELIB - SuUB Bremen
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