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Intrinsic switching in Si-doped HfO2: A study of Curie–Weis..:
Gastaldi, Carlotta
;
Cavalieri, Matteo
;
Saeidi, Ali
...
Applied Physics Letters. 118 (2021) 19 - p. 192904 , 2021
Link:
https://doi.org/10.1063/5.0052129
RT Journal T1
Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_5.0052129&Exemplar=1&LAN=DE A1 Gastaldi, Carlotta A1 Cavalieri, Matteo A1 Saeidi, Ali A1 O'Connor, Eamon A1 Kamaei, Sadegh A1 Rosca, Teodor A1 Stolichnov, Igor A1 Ionescu, Adrian Mihai PB AIP Publishing YR 2021 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 118 IS 19 SP 192904 LK http://dx.doi.org/https://doi.org/10.1063/5.0052129 DO https://doi.org/10.1063/5.0052129 SF ELIB - SuUB Bremen
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