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1 Ergebnisse
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Dopant profiling of ion-implanted GaAs by terahertz time-do..:
Sahoo, Anup Kumar
;
Au, Wei-Chen
;
Hong, Yu-Cheng
...
Journal of Applied Physics. 133 (2023) 12 - p. , 2023
Link:
https://doi.org/10.1063/5.0138345
RT Journal T1
Dopant profiling of ion-implanted GaAs by terahertz time-domain spectroscopy
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_5.0138345&Exemplar=1&LAN=DE A1 Sahoo, Anup Kumar A1 Au, Wei-Chen A1 Hong, Yu-Cheng A1 Pan, Ci-Ling A1 Zhai, Dongwei A1 Hérault, Emilie A1 Garet, Frédéric A1 Coutaz, Jean-Louis PB AIP Publishing YR 2023 SN 0021-8979 SN 1089-7550 JF Journal of Applied Physics VO 133 IS 12 LK http://dx.doi.org/https://doi.org/10.1063/5.0138345 DO https://doi.org/10.1063/5.0138345 SF ELIB - SuUB Bremen
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