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1 Ergebnisse
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Improved switching stability in SiNx-based RRAM by introduc..:
Yang, Yintang
;
Duan, Yiwei
;
Gao, Haixia
...
Applied Physics Letters. 122 (2023) 11 - p. , 2023
Link:
https://doi.org/10.1063/5.0142897
RT Journal T1
Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_5.0142897&Exemplar=1&LAN=DE A1 Yang, Yintang A1 Duan, Yiwei A1 Gao, Haixia A1 Qian, Mengyi A1 Guo, Jingshu A1 Yang, Mei A1 Ma, Xiaohua PB AIP Publishing YR 2023 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 122 IS 11 LK http://dx.doi.org/https://doi.org/10.1063/5.0142897 DO https://doi.org/10.1063/5.0142897 SF ELIB - SuUB Bremen
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