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1 Ergebnisse
1
Charge trapping layer enabled high-performance E-mode GaN H..:
Jiang, Yang
;
Du, FangZhou
;
Wen, KangYao
...
Applied Physics Letters. 124 (2024) 24 - p. , 2024
Link:
https://doi.org/10.1063/5.0208817
RT Journal T1
Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters
UL https://suche.suub.uni-bremen.de/peid=cr-10.1063_5.0208817&Exemplar=1&LAN=DE A1 Jiang, Yang A1 Du, FangZhou A1 Wen, KangYao A1 He, JiaQi A1 Wang, PeiRan A1 Li, MuJun A1 Tang, ChuYing A1 Zhang, Yi A1 Wang, ZhongRui A1 Wang, Qing A1 Yu, HongYu PB AIP Publishing YR 2024 SN 0003-6951 SN 1077-3118 JF Applied Physics Letters VO 124 IS 24 LK http://dx.doi.org/https://doi.org/10.1063/5.0208817 DO https://doi.org/10.1063/5.0208817 SF ELIB - SuUB Bremen
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