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1 Ergebnisse
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Temperature dependence of the ionization rate in silicon†:
NUTTALL, K. I.
;
NIELD, M. W.
International Journal of Electronics. 24 (1968) 6 - p. 543-551 , 1968
Link:
https://doi.org/10.1080/00207216808938052
RT Journal T1 <Title>Temperature dependence of the ionization rate in silicon†</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1080_00207216808938052&Exemplar=1&LAN=DE A1 NUTTALL, K. I. A1 NIELD, M. W. PB Informa UK Limited YR 1968 SN 0020-7217 SN 1362-3060 JF International Journal of Electronics VO 24 IS 6 SP 543 OP 551 LK http://dx.doi.org/https://doi.org/10.1080/00207216808938052 DO https://doi.org/10.1080/00207216808938052 SF ELIB - SuUB Bremen
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