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Rate-temperature relation for MBE growth of GaAs layers:
KADHIM, N. J.
;
MUKHERJEE, D.
International Journal of Electronics. 69 (1990) 5 - p. 641-645 , 1990
Link:
https://doi.org/10.1080/00207219008920350
RT Journal T1 <Title>Rate-temperature relation for MBE growth of GaAs layers</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1080_00207219008920350&Exemplar=1&LAN=DE A1 KADHIM, N. J. A1 MUKHERJEE, D. PB Informa UK Limited YR 1990 SN 0020-7217 SN 1362-3060 JF International Journal of Electronics VO 69 IS 5 SP 641 OP 645 LK http://dx.doi.org/https://doi.org/10.1080/00207219008920350 DO https://doi.org/10.1080/00207219008920350 SF ELIB - SuUB Bremen
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