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Asymmetrical characteristics of lightly-doped drain MOSFETs:
LIU, B. D.
;
CHIEN, I. K.
International Journal of Electronics. 70 (1991) 1 - p. 101-109 , 1991
Link:
https://doi.org/10.1080/00207219108921260
RT Journal T1 <Title>Asymmetrical characteristics of lightly-doped drain MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1080_00207219108921260&Exemplar=1&LAN=DE A1 LIU, B. D. A1 CHIEN, I. K. PB Informa UK Limited YR 1991 SN 0020-7217 SN 1362-3060 JF International Journal of Electronics VO 70 IS 1 SP 101 OP 109 LK http://dx.doi.org/https://doi.org/10.1080/00207219108921260 DO https://doi.org/10.1080/00207219108921260 SF ELIB - SuUB Bremen
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