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1 Ergebnisse
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Investigation of Using SiC MOSFET for High Temperature Appl..:
Ouaida, Rémy
;
Berthou, Maxime
;
Brosselard, Pierre
...
EPE Journal. 25 (2015) 2 - p. 5-11 , 2015
Link:
https://doi.org/10.1080/09398368.2015.11835467
RT Journal T1
Investigation of Using SiC MOSFET for High Temperature Applications
UL https://suche.suub.uni-bremen.de/peid=cr-10.1080_09398368.2015.11835467&Exemplar=1&LAN=DE A1 Ouaida, Rémy A1 Berthou, Maxime A1 Brosselard, Pierre A1 Oge, Sebastien A1 Bevilacqua, Pascal A1 Joubert, Charles PB Informa UK Limited YR 2015 SN 0939-8368 SN 2376-9319 JF EPE Journal VO 25 IS 2 SP 5 OP 11 LK http://dx.doi.org/https://doi.org/10.1080/09398368.2015.11835467 DO https://doi.org/10.1080/09398368.2015.11835467 SF ELIB - SuUB Bremen
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