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Radiation study of TFET and JLFET-based devices and circuit..:
Aishwarya, K.
;
Lakshmi, B.
Radiation Effects and Defects in Solids. 178 (2022) 3-4 - p. 229-257 , 2022
Link:
https://doi.org/10.1080/10420150.2022.2133708
RT Journal T1 <Title>Radiation study of TFET and JLFET-based devices and circuits: a comprehensive review on the device structure and sensitivity</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1080_10420150.2022.2133708&Exemplar=1&LAN=DE A1 Aishwarya, K. A1 Lakshmi, B. PB Informa UK Limited YR 2022 SN 1042-0150 SN 1029-4953 JF Radiation Effects and Defects in Solids VO 178 IS 3-4 SP 229 OP 257 LK http://dx.doi.org/https://doi.org/10.1080/10420150.2022.2133708 DO https://doi.org/10.1080/10420150.2022.2133708 SF ELIB - SuUB Bremen
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