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Boron phosphorus and arsenic diffusion in MOS transistors: ..:
Guenifi, N.
;
Mahamdi, R.
;
Rahmani, I.
Phosphorus, Sulfur, and Silicon and the Related Elements. 193 (2017) 2 - p. 92-97 , 2017
Link:
https://doi.org/10.1080/10426507.2017.1417304
RT Journal T1 <Title>Boron phosphorus and arsenic diffusion in MOS transistors: Simulation and analysis in 2D and 3D</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1080_10426507.2017.1417304&Exemplar=1&LAN=DE A1 Guenifi, N. A1 Mahamdi, R. A1 Rahmani, I. PB Informa UK Limited YR 2017 SN 1042-6507 SN 1563-5325 JF Phosphorus, Sulfur, and Silicon and the Related Elements VO 193 IS 2 SP 92 OP 97 LK http://dx.doi.org/https://doi.org/10.1080/10426507.2017.1417304 DO https://doi.org/10.1080/10426507.2017.1417304 SF ELIB - SuUB Bremen
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