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MOSFET threshold voltage modelling and parameters optimisat..:
Hossain, Munem
;
Chowdhury, Masud H.
International Journal of Electronics Letters. 9 (2020) 2 - p. 234-245 , 2020
Link:
https://doi.org/10.1080/21681724.2020.1726474
RT Journal T1 <Title>MOSFET threshold voltage modelling and parameters optimisation of new ion implant-based subthreshold device</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1080_21681724.2020.1726474&Exemplar=1&LAN=DE A1 Hossain, Munem A1 Chowdhury, Masud H. PB Informa UK Limited YR 2020 SN 2168-1724 SN 2168-1732 JF International Journal of Electronics Letters VO 9 IS 2 SP 234 OP 245 LK http://dx.doi.org/https://doi.org/10.1080/21681724.2020.1726474 DO https://doi.org/10.1080/21681724.2020.1726474 SF ELIB - SuUB Bremen
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