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1 Ergebnisse
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SiC substrate defects and III-N heteroepitaxy:
Poust, B D
;
Koga, T S
;
Sandhu, R
...
Journal of Physics D: Applied Physics. 36 (2003) 10A - p. A102-A106 , 2003
Link:
https://doi.org/10.1088/0022-3727/36/10a/321
RT Journal T1 <Title>SiC substrate defects and III-N heteroepitaxy</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0022-3727_36_10a_321&Exemplar=1&LAN=DE A1 Poust, B D A1 Koga, T S A1 Sandhu, R A1 Heying, B A1 Hsing, R A1 Wojtowicz, M A1 Khan, A A1 Goorsky, M S PB IOP Publishing YR 2003 SN 0022-3727 SN 1361-6463 JF Journal of Physics D: Applied Physics VO 36 IS 10A SP A102 OP A106 LK http://dx.doi.org/https://doi.org/10.1088/0022-3727/36/10a/321 DO https://doi.org/10.1088/0022-3727/36/10a/321 SF ELIB - SuUB Bremen
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