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Etching mechanisms of Si and SiO2in fluorocarbon ICP plasma..:
Gaboriau, F
;
Cartry, G
;
Peignon, M-C
.
Journal of Physics D: Applied Physics. 39 (2006) 9 - p. 1830-1845 , 2006
Link:
https://doi.org/10.1088/0022-3727/39/9/019
RT Journal T1 <Title>Etching mechanisms of Si and SiO2in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0022-3727_39_9_019&Exemplar=1&LAN=DE A1 Gaboriau, F A1 Cartry, G A1 Peignon, M-C A1 Cardinaud, Ch PB IOP Publishing YR 2006 SN 0022-3727 SN 1361-6463 JF Journal of Physics D: Applied Physics VO 39 IS 9 SP 1830 OP 1845 LK http://dx.doi.org/https://doi.org/10.1088/0022-3727/39/9/019 DO https://doi.org/10.1088/0022-3727/39/9/019 SF ELIB - SuUB Bremen
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