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Effect of ZnO channel thickness on the device behaviour of ..:
Yoon, Sung-Min
;
Yang, Shin-Hyuk
;
Ko Park, Sang-Hee
...
Journal of Physics D: Applied Physics. 42 (2009) 24 - p. 245101 , 2009
Link:
https://doi.org/10.1088/0022-3727/42/24/245101
RT Journal T1
Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3and ferroelectric polymer
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0022-3727_42_24_245101&Exemplar=1&LAN=DE A1 Yoon, Sung-Min A1 Yang, Shin-Hyuk A1 Ko Park, Sang-Hee A1 Jung, Soon-Won A1 Cho, Doo-Hee A1 Byun, Chun-Won A1 Kang, Seung-Youl A1 Hwang, Chi-Sun A1 Yu, Byoung-Gon PB IOP Publishing YR 2009 SN 0022-3727 SN 1361-6463 JF Journal of Physics D: Applied Physics VO 42 IS 24 SP 245101 LK http://dx.doi.org/https://doi.org/10.1088/0022-3727/42/24/245101 DO https://doi.org/10.1088/0022-3727/42/24/245101 SF ELIB - SuUB Bremen
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