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Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs—struc..:
Lee, Y J
;
Lee, C H
;
Tung, L T
...
Journal of Physics D: Applied Physics. 43 (2010) 13 - p. 135101 , 2010
Link:
https://doi.org/10.1088/0022-3727/43/13/135101
RT Journal T1 <Title>Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs—structural intactness with high-temperature annealing</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0022-3727_43_13_135101&Exemplar=1&LAN=DE A1 Lee, Y J A1 Lee, C H A1 Tung, L T A1 Chiang, T H A1 Lai, T Y A1 Kwo, J A1 Hsu, C-H A1 Hong, M PB IOP Publishing YR 2010 SN 0022-3727 SN 1361-6463 JF Journal of Physics D: Applied Physics VO 43 IS 13 SP 135101 LK http://dx.doi.org/https://doi.org/10.1088/0022-3727/43/13/135101 DO https://doi.org/10.1088/0022-3727/43/13/135101 SF ELIB - SuUB Bremen
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