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Interface engineered HfO2-based 3D vertical ReRAM:
Hudec, Boris
;
Wang, I-Ting
;
Lai, Wei-Li
...
Journal of Physics D: Applied Physics. 49 (2016) 21 - p. 215102 , 2016
Link:
https://doi.org/10.1088/0022-3727/49/21/215102
RT Journal T1 <Title>Interface engineered HfO2-based 3D vertical ReRAM</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0022-3727_49_21_215102&Exemplar=1&LAN=DE A1 Hudec, Boris A1 Wang, I-Ting A1 Lai, Wei-Li A1 Chang, Che-Chia A1 Jančovič, Peter A1 Fröhlich, Karol A1 Mičušík, Matej A1 Omastová, Mária A1 Hou, Tuo-Hung PB IOP Publishing YR 2016 SN 0022-3727 SN 1361-6463 JF Journal of Physics D: Applied Physics VO 49 IS 21 SP 215102 LK http://dx.doi.org/https://doi.org/10.1088/0022-3727/49/21/215102 DO https://doi.org/10.1088/0022-3727/49/21/215102 SF ELIB - SuUB Bremen
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