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1 Ergebnisse
1
CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu..:
Wang, Yan
;
Liu, Qi
;
Lu, Hang-Bing
...
Chinese Physics Letters. 28 (2011) 7 - p. 077201 , 2011
Link:
https://doi.org/10.1088/0256-307x/28/7/077201
RT Journal T1
CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2Multilayer Films
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0256-307x_28_7_077201&Exemplar=1&LAN=DE A1 Wang, Yan A1 Liu, Qi A1 Lu, Hang-Bing A1 Long, Shi-Bing A1 Zhang, Sen A1 Li, Ying-Tao A1 Lian, Wen-Tai A1 Yang, Jian-Hong A1 Liu, Ming PB IOP Publishing YR 2011 SN 0256-307X SN 1741-3540 JF Chinese Physics Letters VO 28 IS 7 SP 077201 LK http://dx.doi.org/https://doi.org/10.1088/0256-307x/28/7/077201 DO https://doi.org/10.1088/0256-307x/28/7/077201 SF ELIB - SuUB Bremen
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