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1 Ergebnisse
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The Impact of HCl Precleaning and Sulfur Passivation on the..:
Xue, Bai-Qing
;
Chang, Hu-Dong
;
Sun, Bing
..
Chinese Physics Letters. 29 (2012) 4 - p. 046801 , 2012
Link:
https://doi.org/10.1088/0256-307x/29/4/046801
RT Journal T1
The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0256-307x_29_4_046801&Exemplar=1&LAN=DE A1 Xue, Bai-Qing A1 Chang, Hu-Dong A1 Sun, Bing A1 Wang, Sheng-Kai A1 Liu, Hong-Gang PB IOP Publishing YR 2012 SN 0256-307X SN 1741-3540 JF Chinese Physics Letters VO 29 IS 4 SP 046801 LK http://dx.doi.org/https://doi.org/10.1088/0256-307x/29/4/046801 DO https://doi.org/10.1088/0256-307x/29/4/046801 SF ELIB - SuUB Bremen
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