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1 Ergebnisse
1
High-Mobility P-Type MOSFETs with Integrated Strained-Si0.7..:
Mao, Shu-Juan
;
Zhu, Zheng-Yong
;
Wang, Gui-Lei
...
Chinese Physics Letters. 33 (2016) 11 - p. 118502 , 2016
Link:
https://doi.org/10.1088/0256-307x/33/11/118502
RT Journal T1
High-Mobility P-Type MOSFETs with Integrated Strained-Si0.73Ge0.27Channels and High-κ/Metal Gates
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0256-307x_33_11_118502&Exemplar=1&LAN=DE A1 Mao, Shu-Juan A1 Zhu, Zheng-Yong A1 Wang, Gui-Lei A1 Zhu, Hui-Long A1 Li, Jun-Feng A1 Zhao, Chao PB IOP Publishing YR 2016 SN 0256-307X SN 1741-3540 JF Chinese Physics Letters VO 33 IS 11 SP 118502 LK http://dx.doi.org/https://doi.org/10.1088/0256-307x/33/11/118502 DO https://doi.org/10.1088/0256-307x/33/11/118502 SF ELIB - SuUB Bremen
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