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Photoluminescence investigation of Si as p-type dopant in A..:
Galbiati, N
;
Grilli, E
;
Guzzi, M
...
Semiconductor Science and Technology. 11 (1996) 12 - p. 1830-1837 , 1996
Link:
https://doi.org/10.1088/0268-1242/11/12/011
RT Journal T1 <Title>Photoluminescence investigation of Si as p-type dopant in AlGaAs grown by molecular beam epitaxy on high-index planes</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0268-1242_11_12_011&Exemplar=1&LAN=DE A1 Galbiati, N A1 Grilli, E A1 Guzzi, M A1 Brusaferri, L A1 Pavesi, L A1 Henini, M PB IOP Publishing YR 1996 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 11 IS 12 SP 1830 OP 1837 LK http://dx.doi.org/https://doi.org/10.1088/0268-1242/11/12/011 DO https://doi.org/10.1088/0268-1242/11/12/011 SF ELIB - SuUB Bremen
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