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Investigation of Si as an n-type dopant in AlGaAs grown by ..:
Galbiati, N
;
Grilli, E
;
Guzzi, M
...
Semiconductor Science and Technology. 12 (1997) 5 - p. 555-563 , 1997
Link:
https://doi.org/10.1088/0268-1242/12/5/007
RT Journal T1 <Title>Investigation of Si as an n-type dopant in AlGaAs grown by molecular beam epitaxy on high index planes</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0268-1242_12_5_007&Exemplar=1&LAN=DE A1 Galbiati, N A1 Grilli, E A1 Guzzi, M A1 Albertini, P A1 Brusaferri, L A1 Pavesi, L A1 Henini, M A1 Gasparotto, A PB IOP Publishing YR 1997 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 12 IS 5 SP 555 OP 563 LK http://dx.doi.org/https://doi.org/10.1088/0268-1242/12/5/007 DO https://doi.org/10.1088/0268-1242/12/5/007 SF ELIB - SuUB Bremen
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