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1 Ergebnisse
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Strained-Si single-gate versus unstrained-Si double-gate MO..:
Bufler, F M
;
Schenk, A
;
Fichtner, W
Semiconductor Science and Technology. 19 (2004) 4 - p. S122-S124 , 2004
Link:
https://doi.org/10.1088/0268-1242/19/4/043
RT Journal T1 <Title>Strained-Si single-gate versus unstrained-Si double-gate MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0268-1242_19_4_043&Exemplar=1&LAN=DE A1 Bufler, F M A1 Schenk, A A1 Fichtner, W PB IOP Publishing YR 2004 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 19 IS 4 SP S122 OP S124 LK http://dx.doi.org/https://doi.org/10.1088/0268-1242/19/4/043 DO https://doi.org/10.1088/0268-1242/19/4/043 SF ELIB - SuUB Bremen
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