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Bias–stress-induced threshold voltage shift dependence of n..:
Nguyen, Cam Phu Thi
;
Trinh, Thanh Thuy
;
Dao, Vinh Ai
...
Semiconductor Science and Technology. 28 (2013) 10 - p. 105014 , 2013
Link:
https://doi.org/10.1088/0268-1242/28/10/105014
RT Journal T1
Bias–stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0268-1242_28_10_105014&Exemplar=1&LAN=DE A1 Nguyen, Cam Phu Thi A1 Trinh, Thanh Thuy A1 Dao, Vinh Ai A1 Raja, Jayapal A1 Jang, Kyungsoo A1 Le, Tuan Anh Huy A1 Iftiquar, S M A1 Yi, Junsin PB IOP Publishing YR 2013 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 28 IS 10 SP 105014 LK http://dx.doi.org/https://doi.org/10.1088/0268-1242/28/10/105014 DO https://doi.org/10.1088/0268-1242/28/10/105014 SF ELIB - SuUB Bremen
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