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1 Ergebnisse
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Improvement of memory window and retention with low trap de..:
Choi, Woojin
;
Jang, Kyungsoo
;
Raja, Jayapal
...
Semiconductor Science and Technology. 28 (2013) 3 - p. 035014 , 2013
Link:
https://doi.org/10.1088/0268-1242/28/3/035014
RT Journal T1
Improvement of memory window and retention with low trap density in hydrogenated-amorphous-silicon-germanium nonvolatile memory
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0268-1242_28_3_035014&Exemplar=1&LAN=DE A1 Choi, Woojin A1 Jang, Kyungsoo A1 Raja, Jayapal A1 Cho, Jaehyun A1 Nguyen, Hong Hanh A1 Kim, Minbum A1 Kim, Jiwoong A1 Lee, YounJung A1 Nagarajan, Balaji A1 Yi, Junsin PB IOP Publishing YR 2013 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 28 IS 3 SP 035014 LK http://dx.doi.org/https://doi.org/10.1088/0268-1242/28/3/035014 DO https://doi.org/10.1088/0268-1242/28/3/035014 SF ELIB - SuUB Bremen
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