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Procedure to derive analytical models for microwave noise p..:
Ramirez-Garcia, E
;
Aniel, F P
;
Enciso-Aguilar, M A
.
Semiconductor Science and Technology. 28 (2013) 4 - p. 045003 , 2013
Link:
https://doi.org/10.1088/0268-1242/28/4/045003
RT Journal T1
Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0268-1242_28_4_045003&Exemplar=1&LAN=DE A1 Ramirez-Garcia, E A1 Aniel, F P A1 Enciso-Aguilar, M A A1 Zerounian, N PB IOP Publishing YR 2013 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 28 IS 4 SP 045003 LK http://dx.doi.org/https://doi.org/10.1088/0268-1242/28/4/045003 DO https://doi.org/10.1088/0268-1242/28/4/045003 SF ELIB - SuUB Bremen
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